Infineon SPB12N50C3 Manuals

This data sheet is about SPB12N50C3 Cool MOS power transistor, including the product's maximum rated current, maximum peak current, reverse diode dv/dt, maximum power dissipation, operating temperature range and other information.

SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 is a new high-performance power transistor with high-voltage technology, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitance and improved transconductance

The document introduces the features of four models of Cool MOS™ power transistors: SPP12N50C3, SPB12N50C3, SPI12N50C3, and SPA12N50C3, including new high voltage technology, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances, improved transconductance, and different package types and markings. The maximum ratings of each model are also listed, such as continuous drain current, pulsed drain current, avalanche energy, etc.

SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 is a new revolutionary high voltage MOS power transistor with ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.