Key facts
- Brand
- Infineon
- Model
- SPB12N50C3
- Industry
- Industrial
- Documents
- 4
- Languages
- EN
- Last added
- 2012-04-06
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Infineon SPB12N50C3 Power Transistor Datasheet
The document provides detailed specifications for the Infineon SPB12N50C3 power MOSFET, including maximum ratings such as continuous drain current, pulsed current, avalanche energy, and power dissipation. It also lists electrical parameters like breakdown voltage, gate threshold, capacitances, and on‑state resistance.
Thermal characteristics, transient thermal impedance curves, and mechanical footprint dimensions are presented, along with safety and handling notes. The handbook concludes with contact information for Infineon Technologies AG.
Infineon SPB12N50C3 specifications
| Continuous drain current (Id) at 25 °C | 11.6 A |
|---|---|
| Pulsed drain current (Id,pulse) | 34.8 A |
| Avalanche energy (single pulse) | 340 mJ |
| Power dissipation at 25 °C | 125 W |
| Drain‑source breakdown voltage (VDS) | 500 V |
| Gate threshold voltage (VGS(th)) | 2.1‑3.9 V |
| Input capacitance (Ciss) | 1200 pF |
| Output capacitance (Coss) | 400 pF |
All Infineon SPB12N50C3 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
- Infineon SPB12N50C3 Power Transistor Datasheet 12 p
- Infineon SPP12N50C3 / SPB12N50C3 / SPI12N50C3 / SPA12N50C3 Power MOSFET Datasheet 13 p
- Infineon SPP12N50C3/SPB12N50C3/SPI12N50C3/SPA12N50C3 Cool MOS Power Transistor Datasheet 13 p
- infineon SPP12N50C3 SPB12N50C3 SPI12N50C3 SPA12N50C3 Cool MOS Power Transistor Manual(1)(1) 13 p
Questions answered in these manuals
What is the maximum continuous drain current for the SPB12N50C3?
The continuous drain current is rated at 11.6 A at a case temperature of 25 °C.
What power dissipation can the SPB12N50C3 handle at 25 °C?
It can dissipate up to 125 W when the case temperature is 25 °C.
What is the maximum continuous drain current at 25 °C?
The device can handle a continuous drain current of 11.6 A at 25 °C.
From: Infineon SPP12N50C3 / SPB12N50C3 / SPI12N50C3 / SPA12N50C3 Power MOSFET Datasheet
What is the maximum continuous drain current for these transistors?
The maximum continuous drain current is 11.6 A at 25 °C.
From: Infineon SPP12N50C3/SPB12N50C3/SPI12N50C3/SPA12N50C3 Cool MOS Power Transistor Datasheet
What is the drain‑source breakdown voltage rating?
The devices are rated for a drain‑source breakdown voltage of 500 V.
From: Infineon SPP12N50C3/SPB12N50C3/SPI12N50C3/SPA12N50C3 Cool MOS Power Transistor Datasheet
What is the continuous drain current rating of the SPP12N50C3 transistor?
The continuous drain current is rated at 11.6 A at a case temperature of 25 °C.
From: infineon SPP12N50C3 SPB12N50C3 SPI12N50C3 SPA12N50C3 Cool MOS Power Transistor Manual(1)(1)