SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 is a new revolutionary high voltage MOS power transistor with ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.
This datasheet provides the electrical, thermal and mechanical specifications for Infineon's Cool MOS™ power transistor family, covering the SPP12N50C3, SPB12N50C3, SPI12N50C3 and SPA12N50C3 variants. It includes maximum ratings, characteristic curves, and package information for the P‑TO‑220, P‑TO‑262 and P‑TO‑263 packages.
Key sections detail maximum ratings (continuous and pulsed drain current, avalanche energy), thermal resistance values, on‑state resistance, gate charge characteristics, and typical output and transfer curves. The document also lists package dimensions and mounting guidelines.
| Continuous Drain Current (Ic) | 11.6 A |
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The continuous drain current is rated at 11.6 A at a case temperature of 25 °C.