The document introduces the features of four models of Cool MOS™ power transistors: SPP12N50C3, SPB12N50C3, SPI12N50C3, and SPA12N50C3, including new high voltage technology, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances, improved transconductance, and different package types and markings. The maximum ratings of each model are also listed, such as continuous drain current, pulsed drain current, avalanche energy, etc.
This datasheet provides the electrical, thermal and mechanical specifications of Infineon's Cool MOS™ power transistors SPP12N50C3, SPB12N50C3, SPI12N50C3 and SPA12N50C3. It includes maximum ratings, characteristic curves, and package information for designers.
Key sections cover maximum ratings, thermal characteristics, on‑state resistance, gate charge, avalanche energy, and package dimensions, along with legal and safety notices.
| Drain‑source breakdown voltage (VDS) | 500 V |
|---|---|
| Continuous drain current (ID) at 25 °C | 11.6 A |
| Pulsed drain current (ID, pulsed) | 34.8 A |
| Avalanche energy (single pulse) | 340 mJ |
| Gate‑source voltage (VGS) rating | +20 V |
| Power dissipation at 25 °C | 125 W |
| Operating temperature range | -55 °C to +150 °C |
| Input capacitance (Ciss) | 1200 pF |
| Output capacitance (Coss) | 400 pF |
The maximum continuous drain current is 11.6 A at 25 °C.
The devices are rated for a drain‑source breakdown voltage of 500 V.