SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 is a new high-performance power transistor with high-voltage technology, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitance and improved transconductance
This datasheet provides the electrical, thermal and mechanical specifications for the Infineon SPP12N50C3, SPB12N50C3, SPI12N50C3 and SPA12N50C3 power MOSFETs. It includes maximum ratings, characteristic curves, and package information for the P‑TO‑220, P‑TO‑263 and FullPAK variants.
Key sections cover maximum ratings such as continuous drain current, pulsed current and avalanche energy, thermal resistance values, detailed capacitance and gate‑charge parameters, as well as typical output and transfer characteristics. Legal and safety notices are also included.
| Continuous drain current (Id) @ 25 °C | 11.6 A |
|---|---|
| Continuous drain current (Id) @ 100 °C | 7 A |
| Gate‑source voltage (AC, f > 1 Hz) | +30 V |
The device can handle a continuous drain current of 11.6 A at 25 °C.