This data sheet is about SPB12N50C3 Cool MOS power transistor, including the product's maximum rated current, maximum peak current, reverse diode dv/dt, maximum power dissipation, operating temperature range and other information.
The document provides detailed specifications for the Infineon SPB12N50C3 power MOSFET, including maximum ratings such as continuous drain current, pulsed current, avalanche energy, and power dissipation. It also lists electrical parameters like breakdown voltage, gate threshold, capacitances, and on‑state resistance.
Thermal characteristics, transient thermal impedance curves, and mechanical footprint dimensions are presented, along with safety and handling notes. The handbook concludes with contact information for Infineon Technologies AG.
| Continuous drain current (Id) at 25 °C | 11.6 A |
|---|---|
| Pulsed drain current (Id,pulse) | 34.8 A |
| Avalanche energy (single pulse) | 340 mJ |
| Power dissipation at 25 °C | 125 W |
| Drain‑source breakdown voltage (VDS) | 500 V |
| Gate threshold voltage (VGS(th)) | 2.1‑3.9 V |
| Input capacitance (Ciss) | 1200 pF |
| Output capacitance (Coss) | 400 pF |
The continuous drain current is rated at 11.6 A at a case temperature of 25 °C.
It can dissipate up to 125 W when the case temperature is 25 °C.
The drain‑source breakdown voltage is specified as 500 V.