Infineon SPI12N50C3 Manuals

This datasheet provides parameter information for SPP12N50C3, SPI12N50C3, SPA12N50C3, including maximum voltage, current, power consumption, temperature, etc.

This document describes the features of SPP12N50C3, SPI12N50C3, and SPA12N50C3 Cool MOS™ power transistors. These transistors utilize a revolutionary high voltage technology and have ultra low gate charge, periodic avalanche rating, and extreme dv/dt rating. Additionally, they have ultra low effective capacitances, improved transconductance, and fully isolated packaging. The document also lists the model numbers, packages, and ordering codes of these products, as well as their maximum ratings and thermal characteristics.

SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 is a new high-performance power transistor with high-voltage technology, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitance and improved transconductance

The document introduces the features of four models of Cool MOS™ power transistors: SPP12N50C3, SPB12N50C3, SPI12N50C3, and SPA12N50C3, including new high voltage technology, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances, improved transconductance, and different package types and markings. The maximum ratings of each model are also listed, such as continuous drain current, pulsed drain current, avalanche energy, etc.

SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 is a new revolutionary high voltage MOS power transistor with ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.