This document describes the features and characteristics of SPP16N50C3, SPI16N50C3, and SPA16N50C3 Cool MOS™ power transistors, including new high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, improved transconductance, and different package types.
The SPP16N50C3 (also marketed as SPI16N50C3 and SPA16N50C3) is a high‑voltage, low‑gate‑charge power MOSFET offered by Infineon Technologies. The document provides detailed maximum ratings, electrical parameters, and thermal performance for the device in various package styles (TO‑220, TO‑262, TO‑220FP).
Key sections cover maximum drain current, breakdown voltage, on‑state resistance, gate charge, avalanche energy, and transient thermal impedance, along with typical output characteristic curves and package dimensions.