This datasheet mainly introduces the features and characteristics of the SPP16N50C3, SPI16N50C3 and SPA16N50C3 products, including rated current, continuous current, pulsed current, avalanche energy, avalanche current, gate source voltage, power dissipation, operating temperature, reverse diode dv/dt and drain source voltage slope.
The SPP16N50C3, SPI16N50C3 and SPA16N50C3 are Cool MOS™ power transistors offering 580 V rating, ultra‑low gate charge and high transconductance. They are supplied in several isolated and non‑isolated TO‑220 and TO‑262 packages and are RoHS compliant.
The datasheet provides maximum ratings such as 16 A continuous drain current, 500 V drain‑source voltage, 20 V gate‑source voltage and 160 W power dissipation (25 °C). Thermal characteristics include a junction‑to‑case resistance of 0.78 K/W and detailed transient thermal impedance curves. Electrical parameters like capacitances, on‑state resistance, gate charge and avalanche energy (460 mJ) are also listed.
| Gate‑Source voltage (VGS) | +20 V (continuous), +30 V (AC) |
|---|---|
| Power dissipation (PD) | 160 W at 25 °C |
| Avalanche energy (single pulse) | 460 mJ |
The part can dissipate up to 160 W when mounted on a suitable heatsink at 25 °C.