This document describes the features and characteristics of SPP16N50C3, SPB16N50C3, SPI16N50C3, and SPA16N50C3 Cool MOS™ power transistors. These products adopt a new high-voltage technology and have ultra-low gate charge, periodic avalanche capability, extremely high dv/dt rating, ultra-low effective capacitance, and improved transconductance. The products are available in different packages and have different ordering codes. The document also provides the maximum ratings for each model, such as continuous drain current, pulsed drain current, avalanche energy, avalanche current, gate-source voltage, etc.
This document provides detailed specifications for the Infineon SPP16N50C3, SPB16N50C3, SPI16N50C3, and SPA16N50C3 power MOSFETs. It includes features such as ultra‑low gate charge, periodic avalanche rating, and extreme dV/dt capability, along with package information for TO‑220, TO‑263, and FullPAK variants.
The datasheet contains maximum ratings, electrical characteristics, thermal parameters, typical output curves, and avalanche energy data. It also references mounting instructions (application note AN‑TO220‑3‑31‑01) and legal notices regarding use in life‑support devices.
| Continuous drain current (Id) | 16 A |
|---|---|
| Drain‑source breakdown voltage (Vds) | 500 V |
| Total gate charge (Qg) | 66 nC |
| Maximum power dissipation (Pmax) | 160 W |
The maximum continuous drain current is 16 A.
The devices are rated for a drain‑source breakdown voltage of 500 V.