Dinghao provides spot inventory, technical data, encyclopedia information, and hot news. This document describes the features and characteristics of SPP16N50C3, SPB16N50C3, SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor, including new high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitance, improved transconductance, etc.
This datasheet provides detailed electrical, thermal, and mechanical characteristics for the Cool MOS™ power transistor family SPP16N50C3, SPB16N50C3, SPI16N50C3 and SPA16N50C3. It includes maximum ratings, typical performance curves, and package information for the P‑TO220‑3‑31, P‑TO263‑3‑2, P‑TO262 and P‑TO263‑3‑1 variants.
Key sections cover maximum drain current, gate‑source voltage limits, avalanche energy, on‑state resistance, transient thermal impedance, and body‑diode forward characteristics. The document also contains safety notices and contact information for Infineon Technologies AG.
| Continuous drain current (Id) | 16 A |
|---|---|
| Gate‑source voltage (Vgs) max | +20 V |
| Avalanche energy (single pulse) | 460 mJ |
| Drain‑source breakdown voltage (Vds) | 500 V |
| Gate charge total (Qg) | 66 nC |
The maximum continuous drain current is 16 A.
The single‑pulse avalanche energy is specified as 460 mJ.
The gate‑source voltage may be up to +20 V (continuous) and +30 V for AC.