Key facts
- Brand
- Infineon
- Model
- SPA11N65C3
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-05
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User Manualinfineon SPP11N65C3 SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor Manual
Infineon SPA11N65C3 specifications
| Maximum Drain‑Source Voltage (VDS) | 650 V |
|---|---|
| On‑State Resistance (RDS(on)) | 0.38 Ω (typical) |
| Junction‑to‑Case Thermal Resistance (RthJC) | 1 K/W |
Source: Infineon SPP11N65C3 / SPA11N65C3 / SPI11N65C3 Cool MOS Power Transistor Datasheet
All Infineon SPA11N65C3 documents by type
User Manual 2
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 650 V.
From: Infineon SPP11N65C3 / SPA11N65C3 / SPI11N65C3 Cool MOS Power Transistor Datasheet
What is the typical on‑state resistance?
The typical on‑state resistance is 0.38 Ω.
From: Infineon SPP11N65C3 / SPA11N65C3 / SPI11N65C3 Cool MOS Power Transistor Datasheet