SPP16N50C3, SPB16N50C3, SPI16N50C3, SPA16N50C3 are Cool MOS™ power transistors with features of new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.
The Infineon SPP16N50C3 series includes four MOSFET variants (SPP16N50C3, SPB16N50C3, SPI16N50C3, SPA16N50C3) designed for high‑voltage, low‑gate‑charge applications. The datasheet provides detailed electrical, thermal, and mechanical characteristics, as well as package information for each part.
Key sections cover maximum ratings, thermal resistance, electrical parameters such as transconductance and capacitances, transient thermal impedance, and avalanche energy limits. Mechanical dimensions and mounting guidelines are also included for the TO‑220, TO‑263, and FullPAK packages.
| Pulsed drain current | 48 A |
|---|---|
| Avalanche energy (single pulse) | 460 mJ |
| Gate‑source voltage (Vgs) | +20 V |
| Power dissipation (25 °C) | 160 W |
| Drain‑source breakdown voltage | 500 V |
| Maximum operating temperature | +150 °C |
A single avalanche pulse can deliver up to 460 mJ of energy.
The gate‑source voltage is limited to +20 V (continuous) and +30 V for AC operation above 1 Hz.
The devices are rated for a drain‑source breakdown voltage of 500 V.