This document introduces the BFS17P, an NPN silicon RF transistor released on November 17, 2005. It is suitable for broadband amplifiers up to 1 GHz with collector currents ranging from 1 mA to 20 mA. It is an ESD-sensitive device and requires careful handling.
The BFS17P is an NPN silicon RF transistor intended for broadband amplifiers up to 1 GHz with collector currents from 1 mA to 20 mA. The document provides maximum ratings, DC and AC electrical characteristics, thermal resistance data and permissible pulse loads.
Package information, pin configuration and marking layout are also listed, along with standard packing details and contact information for Infineon Technologies AG.
| Collector‑emitter voltage (VCEO) | 15 V |
|---|---|
| Collector‑base voltage (VCBO) | 25 V |
| Emitter‑base voltage (VEB) | 25 V |
| Collector current (IC) | 25 mA |
| Total power dissipation (PD) | 280 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Ta) | -65 °C to 150 °C |
| Package type | SOT‑23 |
The maximum collector‑emitter voltage is 15 V.
The BFS17P is supplied in an SOT‑23 package.
The transistor can handle up to 25 mA of collector current.
It is rated for ambient temperatures from –65 °C to 150 °C.