Key facts
- Brand
- Infineon
- Model
- BC808
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-10
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Infineon BC807W BC808W PNP Silicon AF Transistors Datasheet
This document is a datasheet for the BC807W and BC808W PNP Silicon AF Transistors, designed for general AF applications. Key features include high collector current, high current gain, and low collector-emitter saturation voltage. The transistors are available in SOT323 packages with various type markings (5As, 5Bs, 5Cs, 5Es, 5Fs, 5Gs).
Read onlineInfineon BC808 specifications
| Collector-emitter voltage | 45 V (BC808W), 25 V (BC807W) |
|---|---|
| Collector-base voltage | 50 V (BC808W), 30 V (BC807W) |
| Emitter-base voltage | 5 V |
| DC collector current | 500 mA |
| Peak collector current | 1 A |
| Total power dissipation | 250 mW (BC808W), 150 mW (BC807W) |
| Junction temperature | -65 ... 150 °C |
| Transition frequency | 200 MHz |
Source: Infineon BC807W BC808W PNP Silicon AF Transistors Datasheet
All Infineon BC808 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the complementary types for BC807W and BC808W?
The complementary types are BC817W and BC818W (NPN).
From: Infineon BC807W BC808W PNP Silicon AF Transistors Datasheet
What is the maximum collector-emitter saturation voltage?
The maximum collector-emitter saturation voltage is 0.7 V when IC = 500 mA and IB = 50 mA.
From: Infineon BC807W BC808W PNP Silicon AF Transistors Datasheet
What is the transition frequency of these transistors?
The maximum transition frequency (fT) is 200 MHz when IC = 50 mA and VCE = 5 V.
From: Infineon BC807/BC808 PNP Silicon AF Transistors Datasheet
What are the available package types?
The transistors are available in SOT23 packages with various markings including 5As, 5Bs, 5Cs, 5Es, 5Fs, and 5Gs.
From: Infineon BC807/BC808 PNP Silicon AF Transistors Datasheet