Key facts
- Brand
- Infineon
- Model
- BC818
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN · ZH
- Last added
- 2012-07-10
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Infineon BC817, BC818 NPN Silicon AF Transistors Datasheet
This document is a datasheet for the Infineon BC817 and BC818 series of NPN silicon AF transistors. These components are designed for general AF applications and offer high collector current, high current gain, and low collector-emitter saturation voltage. Complementary PNP types (BC807, BC808) are also available.
Read onlineInfineon BC818 specifications
| Collector-emitter voltage | 45 V (BC817), 25 V (BC818) |
|---|---|
| DC collector current | 500 mA |
| Peak collector current | 1 A |
| Total power dissipation | 330 mW |
| Junction temperature | -65 ... 150 °C |
| Transition frequency | 170 MHz |
Source: Infineon BC817, BC818 NPN Silicon AF Transistors Datasheet
All Infineon BC818 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the complementary types for BC817 and BC818?
The complementary types are BC807 and BC808 (PNP).
From: Infineon BC817, BC818 NPN Silicon AF Transistors Datasheet
What is the pin configuration for the SOT23 package?
Pin 1 is Base (B), Pin 2 is Emitter (E), and Pin 3 is Collector (C).
From: Infineon BC817, BC818 NPN Silicon AF Transistors Datasheet
What are the applications for these transistors?
They are designed for general audio frequency (AF) applications.
From: Infineon BC817W/BC818W NPN Silicon AF Transistors Datasheet
What is the maximum DC collector current?
The maximum DC collector current is 500 mA.
From: Infineon BC817W/BC818W NPN Silicon AF Transistors Datasheet