Key facts
- Brand
- Infineon
- Model
- BC817U
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-10
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Infineon BC817UPN NPN/PNP Silicon Transistor Array Datasheet
The document describes the BC817UPN, an NPN/PNP silicon transistor array manufactured by Infineon Technologies. It features two galvanically isolated transistors within a single package, making it suitable for audio frequency (AF) input stages and driver applications. Key characteristics include high current gain and low collector-emitter saturation voltage.
Read onlineInfineon BC817U specifications
| Collector-emitter voltage (VCEO) | 45 V |
|---|---|
| DC collector current (IC) | 500 mA |
| Peak collector current (Icm) | 1 A |
| Total power dissipation (Ptot) at Tg = 25°C | 330 mW |
| Junction temperature (Tj) | -65 ... 150 °C |
| Transition frequency (fT) | 170 MHz |
Source: Infineon BC817UPN NPN/PNP Silicon Transistor Array Datasheet
All Infineon BC817U documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum DC collector current for the BC817UPN?
The maximum DC collector current is 500 mA.
From: Infineon BC817UPN NPN/PNP Silicon Transistor Array Datasheet
What are the applications for the BC817U?
The device is intended for AF input stages and driver applications.
From: Infineon BC817U NPN Silicon Transistor Array Datasheet
How many transistors are in the BC817U package?
The package contains two galvanically isolated transistors.
From: Infineon BC817U NPN Silicon Transistor Array Datasheet