BFS17P is a NPN Silicon RF Transistor for broadband amplifiers up to 1GHz at collector currents from 1 mA to 20 mA.
This document is a technical datasheet for the Infineon BFS17P, an NPN silicon RF transistor designed for broadband amplifiers operating up to 1 GHz. The device supports collector currents ranging from 1 mA to 20 mA.
The datasheet provides comprehensive electrical specifications including DC characteristics such as breakdown voltages and current gain, AC parameters like transition frequency and noise figure, and maximum ratings for voltage, power dissipation, and temperature.
| Collector-emitter voltage (VCEO) | 15 V |
|---|---|
| Collector current (IC) | 25 mA |
| Total power dissipation (Ptot) | 280 mW |
| Junction temperature (Tj) | -65 ... 150 °C |
| Transition frequency (fT) @ 2 mA | 1.4 GHz |
| Noise figure (F) | 3.5 dB |
The maximum collector-emitter voltage (VcEO) is 15 V.
The permissible total power dissipation (Prot) is 280 mW when the junction temperature is less than 55°C.