This document is a summary of QFET products, introducing the features and characteristics of QFET products, including product brands, models, names and other information.
This document provides design specifications and technical data for the FQAF16N50, an N-Channel enhancement mode power MOSFET produced using Fairchild's proprietary planar stripe, DMOS technology. The device is designed to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capability in avalanche and commutation modes.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 11.3 A |
| Gate Charge (Typical) | 60 nC |
| Reverse Transfer Capacitance (Typical) | 35 pF |
The maximum continuous drain current at 25°C is 11.3 A.
The maximum drain-source voltage rating is 500 V.
The operating and storage temperature range is -55 to +150 °C.