Key facts
- Brand
- Fairchild
- Model
- FQAF19N60
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQAF19N60 Datasheet
The FQAF19N60 is a 600 V N‑Channel enhancement mode power MOSFET built with Fairchild's planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low on‑resistance, fast switching, and robust avalanche capability.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, typical performance curves, and package dimensions for the TO‑3PF case. Key parameters such as drain‑source voltage, continuous and pulsed drain current, gate charge, and thermal resistance are provided for design engineers.
Fairchild FQAF19N60 specifications
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 11.2 A |
| Pulsed Drain Current (ID) @ 25 °C | 44.8 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) @ 25 °C | 120 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | > 1.04 °C/W |
| Typical Gate Charge (Qg) | 70 nC |
| On‑Resistance (RDS(on)) | 0.38 Ω (typical) |
Source: Fairchild FQAF19N60 Datasheet
All Fairchild FQAF19N60 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 600 V.
What continuous drain current can the FQAF19N60 handle at 25 °C?
It can conduct up to 11.2 A continuously at 25 °C.
What is the maximum drain‑source voltage rating of the FQAF19N60?
The device is rated for a maximum drain‑source voltage of 600 V.
What is the typical gate charge of the FQAF19N60?
The MOSFET has a typical gate charge of about 70 nC.