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The FQAF16N50 MOSFET is an N‑Channel enhancement mode power transistor built with Fairchild’s planar stripe DMOS technology, optimized for low on‑state resistance and high‑efficiency switching in power supplies and lamp ballasts.
Key specifications include a 500 V drain‑source breakdown voltage, 11.3 A continuous drain current at 25 °C, 0.32 Ω on‑resistance at Vgs = 10 V, typical gate charge of 60 nC, and a maximum power dissipation of 110 W. Thermal resistance values and detailed electrical characteristics are provided for design verification.
| Drain‑Source Voltage (VDS) | 500 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 11.3 A |
| Power Dissipation (PD) @ 25 °C | 110 W |
The maximum drain‑source voltage is 500 V.
It can handle a continuous drain current of 11.3 A at 25 °C.
It can dissipate up to 110 W at a case temperature of 25 °C.