Key facts
- Brand
- Fairchild
- Model
- FQA24N60
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild FQA24N60 600V N-Channel MOSFET Datasheet
The document describes the Fairchild FQA24N60, an N-Channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. The device is tailored to minimize on-state resistance and provide superior switching performance while withstanding high energy pulses in avalanche and commutation modes. It is well-suited for use in high efficiency switch mode power supply applications.
Read onlineFairchild FQA24N60 specifications
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 23.5 A |
| Continuous Drain Current (Tc = 100°C) | 14.9 A |
| Pulsed Drain Current | 94 A |
| On-Resistance | 0.24 Ω typical @ Vgs = 10 V |
| Gate Charge (Typical) | 110 nC |
| Reverse Transfer Capacitance (Typical) | 56 pF |
| Operating and Storage Temperature Range | -55 to +150 °C |
All Fairchild FQA24N60 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
Is the device avalanche tested?
Yes, the devices are 100% avalanche tested.
What are the operating and storage temperature ranges for this MOSFET?
The device operates and can be stored in a temperature range from -55 to +150 °C.
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 600 V.
What continuous drain current can the FQA24N60 handle at 25 °C?
It can conduct up to 23.5 A continuously at a case temperature of 25 °C.