Key facts
- Brand
- Fairchild
- Model
- FQPF34N20
- Category
- Other device
- Documents
- 3
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF34N20L N-Channel MOSFET Datasheet
The FQPF34N20L is a 200 V logic N‑Channel MOSFET built with Fairchild’s planar stripe DMOS technology, offering low on‑resistance, low gate charge, and fast switching for high‑efficiency DC‑DC converters and motor control applications.
Key specifications include a continuous drain current of 17.5 A, on‑resistance of 0.075 Ω at VGS = 10 V, typical gate charge of 55 nC, and a power dissipation rating of 55 W at 25 °C. The device is supplied in a TO‑220 package with thermal resistance RθJC = 2.27 °C/W.
Fairchild FQPF34N20 specifications
| Drain‑Source Voltage (VDSS) | 200 V |
|---|---|
| Continuous Drain Current (ID) | 17.5 A |
| On‑Resistance (RDS(on)) | 0.075 Ω @ VGS=10 V |
| Typical Gate Charge (Qg) | 55 nC |
| Power Dissipation (PD) at 25 °C | 55 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 2.27 °C/W |
All Fairchild FQPF34N20 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQPF34N20L?
The device is rated for a maximum drain‑source voltage of 200 V.
What is the typical on‑resistance at VGS = 10 V?
The typical on‑resistance is 0.075 Ω when VGS is 10 V.
What is the maximum drain‑source voltage for the FQPF34N20?
The device is rated for a maximum drain‑source voltage of 200 V.
What continuous drain current can the FQPF34N20 handle at 25 °C?
It can conduct up to 17.5 A continuously at a case temperature of 25 °C.