Key facts
- Brand
- Fairchild
- Model
- FQPF3P20
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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FAIRCHILD FQPF3N20 handbook
The FQPF3P20 is a P‑channel QFET MOSFET featuring avalanche‑rugged technology, low intrinsic capacitances, and a TO‑220F package. It offers a high breakdown voltage, low on‑resistance, and robust safe‑operating area for power switching applications.
Key electrical ratings include a -200 V drain‑to‑source breakdown voltage, 2.2 A continuous drain current at 25 °C, and a typical on‑state resistance of 2.06 Ω. The device is packaged in a TO‑220F case with defined mechanical dimensions and thermal resistance values for reliable heat dissipation.
Fairchild FQPF3P20 specifications
| Drain‑to‑Source Breakdown Voltage (BVdss) | -200 V |
|---|---|
| Continuous Drain Current (Tc = 25 °C) | 2.2 A |
| Gate Threshold Voltage (Vgs(th)) | -3.0 to 5.0 V |
| On‑State Resistance (Rds(on)) | 2.06 Ω (typ) |
| Total Power Dissipation (Tc = 25 °C) | 32 W |
| Package Type | TO‑220F |
| Package Length | 10.16 mm |
Source: FAIRCHILD FQPF3N20 handbook
All Fairchild FQPF3P20 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑to‑source voltage rating?
The device is rated for a maximum drain‑to‑source voltage of -200 V.
What is the typical continuous drain current at 25 °C?
The typical continuous drain current at 25 °C is 2.2 A.
What is the maximum drain‑to‑source voltage for the FQPF3P20?
The maximum drain‑to‑source breakdown voltage is –200 V.
What is the typical total gate charge of the device?
The typical total gate charge is 6.0 nC.