Key facts
- Brand
- Fairchild
- Model
- FQPF3N30
- Category
- Other device
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF3N30 N-Channel MOSFET Datasheet
The FQPF3N30 is a 300 V N‑Channel enhancement‑mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. The device is optimized for low on‑state resistance, fast switching, and high‑energy pulse capability, making it suitable for high‑efficiency DC‑DC converters and switch‑mode power supplies.
Key electrical parameters include a continuous drain current of 1.95 A at 25 °C, a pulsed drain current rating of 78 A, a gate‑source voltage rating of +30 V, and a typical gate charge of 5.5 nC. The MOSFET is supplied in a TO‑220F package with a maximum power dissipation of 20 W and a junction‑to‑case thermal resistance of 6.25 °C·W.
Fairchild FQPF3N30 specifications
| Drain‑Source Voltage (VDS) | 300 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 1.95 A |
| Pulsed Drain Current (ID) (Note 1) | 78 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Maximum Power Dissipation (PD) at 25 °C | 20 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 6.25 °C·W |
| Typical Gate Charge (Qg) | 5.5 nC |
| Package | TO‑220F |
All Fairchild FQPF3N30 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current for the FQPF3N30?
The maximum continuous drain current is 1.95 A at a junction temperature of 25 °C.
What is the drain‑source breakdown voltage of the FQPF3N30?
The drain‑source breakdown voltage is rated at 300 V.
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 300 V.
What continuous drain current can the FQPF3N30 handle at 25 °C?
It can handle a continuous drain current of 1.95 A at 25 °C.