QFET TM FQA24N60 is an N-channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe DMOS technology. This device features low on-state resistance, superior switching performance, and the ability to withstand high energy pulse in the avalanche and commutation mode. It is well suited for high efficiency switch mode power supply.
The FQA24N60 is a 600 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low gate charge, low output capacitance and fast switching, making it suitable for high‑efficiency switch‑mode power supplies.
Key specifications include a continuous drain current of 23.5 A at 25 °C, a pulsed current rating of 94 A, a typical on‑resistance of 0.24 Ω at VGS = 10 V, and a total gate charge of about 110 nC. The device is supplied in a TO‑3P package with detailed thermal and electrical characteristics provided in the datasheet.
| Drain‑Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (25 °C) | 23.5 A |
| Pulsed Drain Current | 94 A |
| Gate‑Source Voltage | +30 V |
| Power Dissipation (25 °C) | 310 W |
| On‑Resistance (typical) | 0.24 Ω |
| Typical Gate Charge | 110 nC |
| Thermal Resistance, Junction‑to‑Case | 0.4 °C/W |
The device is rated for a maximum drain‑source voltage of 600 V.
It can conduct up to 23.5 A continuously at a case temperature of 25 °C.
The typical on‑resistance is about 0.24 Ω when VGS is 10 V.
The MOSFET is supplied in a TO‑3P package.