Key facts
- Brand
- Fairchild
- Model
- FQAF27N25
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQAF27N25 N-Channel MOSFET Datasheet
The FQAF27N25 is a 250 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching in DC‑DC converters and switch‑mode power supplies, offering low on‑state resistance, fast switching and robust avalanche performance.
Key specifications include a drain‑source voltage rating of 250 V, continuous drain current of 19 A at 25 °C, pulsed current of 76 A, on‑resistance of 0.119 Ω at Vgs = 10 V, typical gate charge of 50 nC, and a power dissipation of 95 W. Thermal resistance is 1.32 °C/W (junction‑to‑case) and the device is rated for operation from –55 °C to +150 °C.
Fairchild FQAF27N25 specifications
| Drain‑Source Voltage (V_DSS) | 250 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 19 A |
| Pulsed Drain Current (I_D) (Note 1) | 76 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| On‑Resistance (R_DS(on)) typical @ V_GS=10 V | 0.119 Ω |
| Total Gate Charge (Q_g) typical | 50 nC |
| Power Dissipation (P_D) @ 25 °C | 95 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 1.32 °C·W |
All Fairchild FQAF27N25 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQAF27N25?
The device is rated for a maximum drain‑source voltage of 250 V.
What is the typical on‑resistance of the FQAF27N25 at V_GS = 10 V?
Typical on‑resistance is 0.119 Ω when the gate‑source voltage is 10 V.