Key facts
- Brand
- Fairchild
- Model
- FQAF22P10
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQAF22P10 P-Channel MOSFET Datasheet
Datasheet 8 pages · 643 KB · EN
The FQAF22P10 is a 100 V P‑Channel enhancement‑mode MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low on‑state resistance, fast switching, and high avalanche capability, making it suitable for low‑voltage applications such as audio amplifiers, DC‑DC converters and motor control.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, and mechanical dimensions for the TO‑3PF package, along with trademark and product status information.
Fairchild FQAF22P10 specifications
| Continuous Drain Current (ID) at 25 °C | -16.6 A |
|---|---|
| On‑Resistance (RDS(on)) | 0.125 Ω @ VGS = -10 V |
| Typical Gate Charge (Qg) | 40 nC |
| Output Capacitance (Coss) | 460 pF (typ) |
All Fairchild FQAF22P10 documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What continuous drain current can the FQAF22P10 handle at 25 °C?
It can conduct up to -16.6 A continuously at a case temperature of 25 °C.
What is the typical on‑resistance of this MOSFET?
The typical on‑resistance is 0.125 Ω when VGS = -10 V.