This document describes the features and characteristics of the FQA24N60 600V N-Channel MOSFET product produced by Fairchild Semiconductor International, including low on-state resistance, superior switching performance, and high energy pulse withstand capability. These products are well suited for high efficiency switch mode power supplies.
The document describes the Fairchild FQA24N60, an N-Channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. The device is tailored to minimize on-state resistance and provide superior switching performance while withstanding high energy pulses in avalanche and commutation modes. It is well-suited for use in high efficiency switch mode power supply applications.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 23.5 A |
| Continuous Drain Current (Tc = 100°C) | 14.9 A |
| Pulsed Drain Current | 94 A |
| On-Resistance | 0.24 Ω typical @ Vgs = 10 V |
| Gate Charge (Typical) | 110 nC |
| Reverse Transfer Capacitance (Typical) | 56 pF |
| Operating and Storage Temperature Range | -55 to +150 °C |
Yes, the devices are 100% avalanche tested.
The device operates and can be stored in a temperature range from -55 to +150 °C.