Key facts
- Brand
- Fairchild
- Model
- FDN360P
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
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Fairchild Semiconductor FDN360P P-Channel MOSFET Datasheet
The document describes the Fairchild Semiconductor FDN360P, a single P-Channel, PowerTrench MOSFET. This device is produced using advanced Power Trench process technology to minimize on-state resistance while maintaining low gate charge for superior switching performance. It is well-suited for low voltage and battery-powered applications where low in-line power loss and fast switching are required.
Read onlineFairchild FDN360P specifications
| Drain-Source Voltage | -30 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Gate Charge (Typical) | 6.2 nC |
| Package Type | SuperSOT™3 |
Source: Fairchild Semiconductor FDN360P P-Channel MOSFET Datasheet
All Fairchild FDN360P documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current for this MOSFET?
The device supports a continuous drain current of 2 A.
From: Fairchild Semiconductor FDN360P P-Channel MOSFET Datasheet
What is the maximum power dissipation for a single operation?
The maximum power dissipation for single operation is 0.5 W.
From: Fairchild Semiconductor FDN360P P-Channel MOSFET Datasheet
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of -30 V.
From: Fairchild FDN360P Single P-Channel PowerTrench MOSFET Datasheet
What is the typical gate charge of the FDN360P?
The typical gate charge is about 5 nC.
From: Fairchild FDN360P Single P-Channel PowerTrench MOSFET Datasheet