Key facts
- Brand
- Fairchild
- Model
- FDN360P
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
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FAIRCHILD FDN360P Manual
This document introduces the FDN360P single P-channel power MOSFET produced by Fairchild Semiconductor. This device is produced using the advanced Power Trench process, which minimizes on-state resistance and maintains low gate charge for superior switching performance. It is suitable for low voltage and battery powered applications that require low in-line power loss and fast switching.
Read onlineFairchild FDN360P specifications
| Drain‑Source Voltage (V_DSS) | -30 V |
|---|---|
| Gate‑Source Voltage (V_GSS) | +20 V |
| Continuous Drain Current (I_D) | -2 A |
| Power Dissipation (P_D) | 0.5 W |
| Junction‑to‑Ambient Thermal Resistance (R_θJA) | 250 °C/W |
| Tape‑and‑Reel Quantity per Reel | 3,000 units |
Source: Fairchild FDN360P Single P-Channel PowerTrench MOSFET Datasheet
All Fairchild FDN360P documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of -30 V.
From: Fairchild FDN360P Single P-Channel PowerTrench MOSFET Datasheet
What is the typical gate charge of the FDN360P?
The typical gate charge is about 5 nC.
From: Fairchild FDN360P Single P-Channel PowerTrench MOSFET Datasheet