Key facts
- Brand
- Fairchild
- Model
- FQAF34N20
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQAF34N20 MOSFET Datasheet
The FQAF34N20 is a 200 V N‑Channel enhancement mode power MOSFET built with Fairchild's planar stripe DMOS technology. It offers low on‑resistance, low gate charge, fast switching, and robust avalanche capability, making it suitable for high‑efficiency DC‑DC converters, SMPS, motor control and UPS applications.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, and package dimensions (TO‑3PF). It also includes test circuit examples, thermal response data, and legal notices regarding trademarks, life‑support usage, and product status definitions.
Fairchild FQAF34N20 specifications
| Drain‑Source Voltage (VDS) | 200 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 23 A |
| Pulsed Drain Current (ID) @ 100 °C | 92 A |
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) | 0.075 Ω |
| Power Dissipation (PD) @ 25 °C | 95 W |
| Typical Gate Charge (Qg) | 60 nC |
All Fairchild FQAF34N20 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current at 25 °C?
The device can handle a continuous drain current of 23 A at 25 °C.
What is the breakdown voltage rating of the FQAF34N20?
The drain‑source breakdown voltage is rated at 200 V.
What is the maximum drain‑source voltage for the FQAF34N20?
The device is rated for a maximum drain‑source voltage of 200 V.
What continuous drain current can the FQAF34N20 handle at 25 °C?
It can conduct up to 23 A continuously at a case temperature of 25 °C.