This file is about FQA170N06's datasheet. This product is a N-Channel enhancement mode power field effect transistors. It has low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability, 175°C maximum junction temperature rating.
This document is a datasheet for the Fairchild Semiconductor FQA170N06, a 60V N-Channel enhancement mode power field effect transistor. Produced using proprietary planar stripe DMOS technology, the device is designed for low voltage applications such as automotive systems, DC/DC converters, and power management in portable products. Key features include a low on-state resistance of 0.00562 ohms, low gate charge, and 100% avalanche testing.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 170 A |
| On-Resistance | 0.00562 Ohms |
| Maximum Junction Temperature | 175°C |
| Package Type | TO-3PN |
The maximum junction temperature rating is 175°C.
Yes, the device is 100% avalanche tested.
The typical gate charge is 220 nC.