The FQA170N06 is a 60V N-channel MOSFET with a maximum current of 170A and a RDS(on) of 0.0056Ω. It is suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
The Fairchild FQA170N06 is a 60 V N‑Channel enhancement‑mode power MOSFET built with planar‑stripe DMOS technology. It is designed for low‑voltage applications such as automotive, DC‑DC converters and high‑efficiency power management in portable and battery‑operated products.
The document provides detailed electrical characteristics, absolute maximum ratings, thermal data, typical performance curves, and test circuit diagrams for gate charge, diode recovery and switching behavior, as well as package dimensions and trademark information.
| Drain‑Source Voltage (VDS) | 60 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 170 A |
| Pulsed Drain Current (ID) (Note 1) | 680 A |
| Gate‑Source Voltage (VGS) Rating | ±25 V |
| On‑Resistance (RDS(on)) Typical | 0.00562 Ω @ VGS=10 V |
| Reverse Transfer Capacitance (Crss) Typical | 620 pF |
| Maximum Junction Temperature | 175 °C |
| Thermal Resistance Junction‑to‑Case (RθJC) | 0.4 °C/W |
The device can handle a continuous drain current of 170 A at a case temperature of 25 °C.
The maximum drain‑source voltage rating is 60 V.
Typical on‑resistance is 0.00562 Ω when VGS = 10 V.
The MOSFET is rated for a maximum junction temperature of 175 °C.