Fairchild FDP3632 Manuals

This document describes the features and characteristics of FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET, including low on-resistance, low Miller charge, low QRR body diode, etc. It is suitable for applications such as DC/DC converters, offline UPS, distributed power architectures and VRMs, primary switches for 24V and 48V systems, high voltage synchronous rectifiers, direct injection/diesel injection systems, 42V automotive load control, and electronic valve train systems.

FDB3632/FDP3632/FDI3632/FDH3632 is a N-channel PowerTrench® MOSFET with an operating voltage of 100V and a typical on-resistance of 7.5mΩ.

FDB3632/FDP3632/FDI3632/FDH3632 is a N-channel power MOSFET produced by Fairchild Semiconductor Corporation, with low on-resistance, low Miller charging, low QRR body diode, and AEC Q101 qualified.

The FDB3632 / FDP3632 / FDI3632 / FDH3632 is a 100V, 80A, 9mΩ N-channel PowerTrench® MOSFET from Fairchild Semiconductor. Its features include rDS(ON) = 7.5mΩ (Typ.), Qg(tot) = 84nC (Typ.), low Miller Charge, low QRR body diode, UIS capability (single pulse and repetitive pulse) and AEC Q101 certification. This product can be used for DC/DC converters and off-line UPS, distributed power architectures and VRMs, 24V and 48V systems primary switch, high voltage synchronous rectifier, direct injection/diesel injection systems, 42V automotive load control and electronic valve train systems.