FDB3632/FDP3632/FDI3632/FDH3632 is a N-channel power MOSFET produced by Fairchild Semiconductor Corporation, with low on-resistance, low Miller charging, low QRR body diode, and AEC Q101 qualified.
This document provides technical specifications for the Fairchild FDB3632, FDP3632, FDI3632, and FDH3632 series of N-Channel PowerTrench MOSFETs. These devices are rated for 100V drain-to-source voltage, 80A continuous drain current, and feature a typical on-resistance of 9mΩ. They are designed for applications including DC/DC converters, off-line UPS systems, distributed power architectures, and automotive systems.
| Drain to Source Voltage | 100 V |
|---|---|
| Gate to Source Voltage | 42 V |
| Continuous Drain Current | 80 A |
| Power Dissipation | 310 W |
| Operating Temperature Range | -55 to 175 °C |
The part has a rated power dissipation of 310 W.
The test condition specifies a pulse width of 100 µs.