This document describes the features and characteristics of FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET, including low on-resistance, low Miller charge, low QRR body diode, etc. It is suitable for applications such as DC/DC converters, offline UPS, distributed power architectures and VRMs, primary switches for 24V and 48V systems, high voltage synchronous rectifiers, direct injection/diesel injection systems, 42V automotive load control, and electronic valve train systems.
This document is a datasheet for the Fairchild FDB3632, FDP3632, and FDI3632 N-Channel PowerTrench MOSFETs. The devices are rated for 100V drain-to-source voltage, 80A continuous drain current, and 9mQ on-resistance. They are designed for applications including DC/DC converters, off-line UPS systems, distributed power architectures, and automotive load control.
| Drain to Source Voltage | 100 V |
|---|---|
| Gate to Source Voltage | 420 V |
| Continuous Drain Current (Tg < 111°C) | 80 A |
| Power dissipation | 310 W |
| Operating and Storage Temperature | -55 to 175 °C |
| Thermal Resistance Junction to Case | 0.48 °C/W |
| Total Gate Charge | 84 nC |