Key facts
- Brand
- Fairchild
- Model
- FDP6030L
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-07
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FAIRCHILD FDP6030L FDB6030L handbook
FDB6030L is a N-channel logic level enhancement mode power field effect transistor produced by Fairchild. It features low gate charge (typical 34 nC), low Crss (typical 175 pF) and fast switching speed. This device is particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Read onlineFairchild FDP6030L specifications
| Drain-Source Voltage (Vdss) | 30 V |
|---|---|
| Gate-Source Voltage (Vgss) | +20 V |
| Total Power Dissipation | 52 W |
| Operating Junction Temperature Range | -65 to +175 °C |
| Thermal Resistance (Junction-to-Case) | 2.9 °C/W |
Source: Fairchild FDP6030L/FDB6030L N-Channel Logic Level PowerTrench MOSFET Datasheet
All Fairchild FDP6030L documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum junction temperature rating?
The device has a maximum junction temperature rating of 175°C.
From: Fairchild FDP6030L/FDB6030L N-Channel Logic Level PowerTrench MOSFET Datasheet
What is the maximum continuous drain current?
The maximum continuous drain current is 48 A.
From: Fairchild FDP6030L/FDB6030L N-Channel Logic Level PowerTrench MOSFET Datasheet