SPW20N60CFD is a new type of high voltage power transistor with ultra-low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability, intrinsic fast-recovery body diode and extreme low reverse recovery charge.
This document presents the key electrical characteristics of the Infineon SPW20N60CFD Cool MOS power transistor, including maximum ratings, on‑state resistance, gate charge and avalanche energy. It also details thermal parameters such as junction‑to‑case resistance and transient thermal impedance.
Additional sections cover typical output and transfer characteristics, capacitance values, breakdown voltage curves and safe operating area limits, allowing designers to assess suitability for high‑voltage, high‑current applications.