The BFS482 is a low-noise, high-gain broadband amplifier that integrates two (galvanic) internal transistors and is suitable for collector currents from 0.2 mA to 20 mA.
This document is a datasheet for the BFS482 NPN Silicon RF Transistor, designed for low-noise, high-gain broadband amplifiers operating at collector currents from 0.2 mA to 20 mA. The device features two galvanically isolated transistors in a single SOT363 package.
| Collector-emitter voltage (VCEO) | 12 V |
|---|---|
| Collector-emitter voltage (VCES) | 20 V |
| Collector-base voltage (VCBO) | 20 V |
| Emitter-base voltage (VEBO) | 2 V |
| Collector current (IC) | 35 mA |
| Base current (IB) | 4 mA |
| Junction temperature (Tj) | 150 °C |
| Transition frequency (fT) | 8 GHz |
| Noise figure (F) | 1.2 dB at 900 MHz |
The transition frequency (fT) is 8 GHz.
The noise figure is 1.2 dB at 900 MHz.
The package contains two galvanically isolated transistors.