lnfineon BFS483 handbook(1)

Update: 28 September, 2023

This document describes the features and characteristics of the BFS483 NPN Silicon RF Transistor. It is designed for low-noise, high-gain broadband amplifiers with collector currents ranging from 2 mA to 28 mA. It has an fT of 8 GHz and a gain of 1.2 dB at 900 MHz. The transistor package contains two galvanically isolated transistors.

---

File format: PDF

Size: -

MD5 Checksum: 06D68716E40958CC94CAA02C04D259C7

Publication date: 01 August, 2012

Downloads: -

PDF Link: lnfineon BFS483 handbook(1) PDF