This document describes the features and characteristics of the BFS483 NPN Silicon RF Transistor. It is designed for low-noise, high-gain broadband amplifiers with collector currents ranging from 2 mA to 28 mA. It has an fT of 8 GHz and a gain of 1.2 dB at 900 MHz. The transistor package contains two galvanically isolated transistors.
The document describes the BFS483, an NPN Silicon RF Transistor designed for low-noise and high-gain broadband amplifier applications. It features two galvanically isolated transistors within a single SOT-363 package. The device is optimized for collector currents ranging from 2 mA to 28 mA with a maximum operating frequency of 8 GHz.
| Collector-emitter voltage (Vceo) | 12 V |
|---|---|
| Collector current (Ic) | 65 mA |
| Total power dissipation (Ptot) | 450 mW |
| Junction temperature (Tj) | -65 ... 150 °C |
| Noise figure at 900 MHz | 1.2 dB |
There are two galvanically isolated transistors in one package.
The maximum rated collector current is 65 mA.