FDP55N06/FDPF55N06 is a N-Channel enhancement mode power field effect transistors produced by Fairchild. It has features like 55A, 60V, RDS(on) = 0.022 Ω @VGS = 10 V, low gate charge ( typical 30 nC), low Crss ( typical 60 pF), fast switching, 100% avalanche tested, improved dv/dt capability.
This document is a datasheet for the Fairchild FDP55N06 and FDPF55N06, which are 60V N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for applications such as high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts. This manual is written in Chinese.
| Drain-Source Voltage | 60 V |
|---|---|
| Operating Temperature Range | -55 to +150 °C |
The MOSFETs can operate between -55°C and +150°C, with a maximum lead soldering temperature of 300°C.
The static drain-source on-resistance is 0.022 Ω at a gate-source voltage of 10 V.