FDP55N06/FDPF55N06 60V N-Channel MOSFET is a low gate charge, low Crss, fast switching power field effect transistor produced by Fairchild Semiconductor Corporation.
This document is a datasheet for the FDP55N06 and FDPF55N06 60V N-Channel MOSFETs, produced using Fairchild's proprietary UniFET technology. These devices are designed for high-efficiency switched mode power supplies and active power factor correction applications. Key features include a 55A continuous drain current, a low on-resistance of 0.022 Ω, and fast switching capabilities.
| Drain-Source Voltage | 60 V |
|---|---|
| Gate Charge | 30 nC |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-220 / TO-220F |
The typical static drain-source on-resistance is 0.022 Ω at VGS = 10 V.
These devices are well suited for high efficient switched mode power supplies and active power factor correction.