FDP6676/FDB6676 is a 30V N-Channel Logic Level PowerTrench MOSFET with extremely low RDS(ON) that is optimized for low-side synchronous rectifier operation.
The Fairchild FDP6676/FDB6676 is a 30 V N‑Channel Logic Level PowerTrench MOSFET designed for high‑efficiency DC/DC converters and synchronous rectifier applications. It offers low on‑resistance and high current capability, with a maximum continuous drain current of 84 A and a pulsed rating of 240 A.
The document provides comprehensive electrical specifications, typical performance curves, and thermal characteristics, including junction‑to‑case resistance of 1.6 °C/W. Package information, ordering details, and product status definitions are also included.
| Drain‑Source Voltage (VDS) | 30 V |
|---|---|
| Gate‑Source Voltage (VGS) | ±16 V |
| Continuous Drain Current (ID) | 84 A |
| Total Power Dissipation (PD) | 93 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 1.6 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C/W |
The maximum drain‑source voltage is 30 V.
The device can handle up to 84 A continuous drain current.
The junction‑to‑case thermal resistance is 1.6 °C/W.