This document is the datasheet of FDP6676S/FDB6676S, which introduces the features of the product, including product model, package, pin, typical application circuit, characteristic parameters, etc.
This document provides technical specifications for the FDP6676S and FDB6676S devices, which are 30V N-Channel PowerTrench SyncFET MOSFETs designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. The devices feature an integrated Schottky body diode using Fairchild's monolithic SyncFET technology.
| Drain-Source Voltage | 30 V |
|---|---|
| Continuous Drain Current | 76 A |
| Pulsed Drain Current | 150 A |
| Total Power Dissipation @ To = 25°C | 70 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 1.8 °CiW |
The device supports a continuous drain current of 76 A.
The total power dissipation is rated at 70 W.
The device operates and stores within a range of -55 to +150 °C.