BLF246B is a VHF push-pull power MOS transistor with high power gain, easy power control, good thermal stability, and excellent reliability. It is suitable for large signal applications in the VHF frequency range.
The document describes the Philips BLF246B, an N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. Key features include high power gain, easy power control, good thermal stability, and gold metallization for excellent reliability.
The datasheet details the device's electrical characteristics, limiting values, and thermal properties. It includes typical performance curves for RF operation in CW class-AB and class-B circuits at 175 MHz, along with a complete list of components required for the recommended test circuit.
| Drain-source voltage (VDS) | 65 V |
|---|---|
| Gate-source voltage (VES) | +20 V |
| Drain current (DC) (ID) | 8 A |
| Junction temperature (Tj) | 200 °C |
The device is designed for large signal applications in the VHF frequency range.
It uses an 8-lead SOT161A balanced flange package with a ceramic cap.
The maximum junction temperature (Tj) is 200 °C.