The BLF246 is a power MOS transistor developed by Philips. It has high power gain, low noise figure, easy power control, good thermal stability and full load mismatch capability. It is applied to large signal amplifier applications in the VHF frequency range.
This document is a product specification datasheet for the Philips BLF246, a silicon N-channel enhancement-mode vertical D-MOS transistor. It is designed for large signal amplifier applications in the VHF frequency range and is packaged in an SOT121 flange package with a ceramic cap.
The datasheet provides comprehensive electrical characteristics including drain-source breakdown voltage, leakage currents, transconductance, and capacitances at 25 °C. It also lists limiting values such as maximum power dissipation (130 W) and junction temperature (200 °C), along with thermal resistance data.
| DC drain current (ID) | 13 A |
|---|---|
| Total power dissipation (PD) | 130 W |
| Junction temperature (Tj) | 200 °C |
| Forward transconductance (gfs) | 3 to 5 S |
| Drain-source on-state resistance (RDS(on)) | 0.2 to 0.3 Ohm |
| Input capacitance (Ciss) | 225 pF |
It is used for large signal amplifier applications in the VHF frequency range.
The gate-source input must be protected against static discharge during transport or handling.