BLF245B is a VHF push-pull power MOS transistor produced by Philips Semiconductors. It features high power gain, easy power control, good thermal stability and excellent reliability.
The document is a product specification datasheet for the Philips BLF245B, a VHF push-pull power MOS transistor. It features high power gain and easy power control, utilizing gold metallization for reliability. The device consists of dual silicon N-channel enhancement mode vertical D-MOS transistors encapsulated in a 4-lead SOT279 balanced flange envelope with a ceramic cap.
| Drain-source voltage (VDS) | 65 V |
|---|---|
| Gate-source voltage (+VGS) | -20 V |
| DC drain current (ID) | 4.5 A |
| Operating frequency (CW, class-B) | 175 MHz |
| Power gain (CW, class-B) | > 14 dB |
The transistor is encapsulated in a 4-lead, SOT279 balanced flange envelope with a ceramic cap.
Pin 1 and 3 are gates, Pin 2 and 4 are drains, and Pin 5 is the source.
The maximum junction temperature (Tj) is 200 °C.