BLF245 is a VHF power MOS transistor with high power gain, low noise figure, easy power control, good thermal stability, and withstands full load mismatch.
This document is a product specification datasheet for the Philips BLF245, an N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The device features high power gain, low noise figure, and good thermal stability, encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap.
The datasheet provides comprehensive technical data including limiting values such as a maximum drain-source voltage of 65V and total power dissipation of 68W. It details RF performance characteristics for Class-B operation at 175 MHz, offering typical power gain greater than 13 dB and noise figures under 2 dB. Additionally, it includes package outline dimensions and application circuit information.
| Total power dissipation | 68 W |
|---|---|
| DC drain current | 6 A |
| Noise figure | < 2 dB |
The transistor is encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap.
Pin 1 is drain, Pin 2 is source, Pin 3 is gate, and Pin 4 is source.
The maximum junction temperature (Tj) is 200 °C.