SPW47N60CFD is a high-voltage power transistor launched by Diodes Inc. This device uses advanced CoolMOSTM technology and features extremely low reverse recovery charge, ultra-low gate charge, extreme dv/dt ratings, high peak current capability, periodic avalanche ratings, etc.
The SPW47N60CFD is a CoolMOS™ power transistor featuring high‑voltage technology, fast‑recovery body diode, low reverse recovery charge, and ultra‑low gate charge. It is supplied in a PG‑TO‑247 package and complies with JEDEC and RoHS requirements.
The document lists maximum ratings such as a continuous drain current of 46 A at 25 °C, pulsed drain current of 115 A, and a drain‑source breakdown voltage of 600 V. It also provides detailed thermal characteristics, dynamic parameters like input capacitance (7700 pF) and on‑state resistance (0.07 Ω), and typical characteristic curves for the device.
| Continuous drain current (Id) at 25 °C | 46 A |
|---|---|
| Pulsed drain current (Id,pulse) at 25 °C | 115 A |
| Drain‑source breakdown voltage (Vds) | 600 V |
| Gate threshold voltage (Vgs(th)) | 3 V to 5 V |
| Input capacitance (Ciss) | 7700 pF |
| On‑state resistance (Rds(on)) at 25 °C | 0.07 Ω |
The device can handle a continuous drain current of 46 A at 25 °C.
The drain‑source breakdown voltage is rated at 600 V.
The gate threshold voltage is between 3 V and 5 V.
The input capacitance (Ciss) is 7700 pF.