Key facts
- Brand
- Infineon
- Model
- SPP20N60S5
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-04-06
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Infineon SPP20N60S5 Cool MOS Power Transistor Datasheet
The SPP20N60S5 is a Cool MOS™ power transistor featuring a 600 V drain‑source breakdown voltage, 20 A continuous drain current, and ultra‑low gate charge. It is supplied in a TO‑220 package and complies with RoHS and JEDEC standards.
The datasheet provides detailed electrical, thermal, and switching characteristics, including on‑state resistance, capacitances, avalanche energy, and typical transient thermal impedance, to aid designers in selecting and integrating the device.
Infineon SPP20N60S5 specifications
| Continuous drain current (ID) at 25 °C | 20 A |
|---|---|
| Avalanche energy (single pulse) | 690 mJ |
| Power dissipation at 25 °C (PD) | 208 W |
Source: Infineon SPP20N60S5 Cool MOS Power Transistor Datasheet
All Infineon SPP20N60S5 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current of the SPP20N60S5?
The device can conduct 20 A continuously at an ambient temperature of 25 °C.
From: Infineon SPP20N60S5 Cool MOS Power Transistor Datasheet
How much avalanche energy can the device absorb in a single pulse?
It can absorb up to 690 mJ of avalanche energy per pulse.
From: Infineon SPP20N60S5 Cool MOS Power Transistor Datasheet
What is the maximum drain‑source voltage of the SPP20N60S5?
The device is rated for a drain‑source breakdown voltage of 600 V.
From: infineon SPP20N60S5 Preliminary data SPB20N60S5 Manual
How much continuous drain current can the SPP20N60S5 handle at 25 °C?
It can conduct up to 20 A continuously at 25 °C.
From: infineon SPP20N60S5 Preliminary data SPB20N60S5 Manual
What is the maximum continuous drain current?
The device can conduct up to 20 A continuously at a case temperature of 25 °C.
From: Infineon SPP20N60S5 / SPB20N60S5 Power MOSFET Datasheet
What is the allowed gate‑source voltage?
The maximum gate‑source voltage is +20 V.
From: Infineon SPP20N60S5 / SPB20N60S5 Power MOSFET Datasheet