SPP20N60S5/SPB20N60S5 is a high voltage power transistor with RDS(on) of 0.19 ohms, ID of 20 A, and TO220 and TO263 packages.
The Infineon SPP20N60S5 is a high‑voltage, low‑gate‑charge power MOSFET offered in a TO‑220‑3‑1 package. The document provides maximum ratings, electrical, thermal and dynamic characteristics, as well as typical output and transfer curves.
Key information includes continuous and pulsed drain current limits, on‑resistance values, gate charge, avalanche energy, and detailed mechanical dimensions for PCB layout. The data is intended for designers evaluating the device for high‑voltage switching applications.
| Drain‑source breakdown voltage (Vds) | 600 V |
|---|---|
| Continuous drain current (Id) at 25 °C | 20 A |
| Pulsed drain current (Id,pulse) | 40 A |
| On‑resistance (Rds(on)) typ. | 0.16 Ω |
| Total gate charge (Qg) typ. | 79 nC |
| Power dissipation (Ptot) at 25 °C | 208 W |
| Thermal resistance, junction‑to‑case (RθJC) | 0.6 K/W |
| Gate‑source voltage rating (Vgs) | ±20 V |
| Package | TO‑220‑3‑1 (P‑TO220‑3‑1) |
| Avalanche energy (single pulse) | 690 mJ |
The device is rated for a drain‑source breakdown voltage of 600 V.
It can conduct up to 20 A continuously at 25 °C.
The typical on‑resistance is 0.16 Ω (max 0.19 Ω).
It is offered in a TO‑220‑3‑1 (P‑TO220‑3‑1) package.